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參數(shù)資料
| 型號： | JANS2N3501L |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | SIMILAR TO TO-5, 3 PIN |
| 文件頁數(shù)： | 9/20頁 |
| 文件大小： | 128K |
| 代理商： | JANS2N3501L |
MIL-PRF-19500/560E
17
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50
.
2. Sampling oscilloscope: Zin ≥ 1 M, Cin ≤ 20 pF, rise time ≤ 20 ns.
3. ton conditions: IC = 2 A, IB1 = 200 mA.
FIGURE 6. Saturated turn-on switching waveform and time test circuit.
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50
.
2. Sampling oscilloscope: Zin ≥ 1 M, Cin ≤ 20 pF, rise time ≤ 20 ns.
3. ton conditions: CI = 2 A, IB1 = IB2 = 200 mA.
FIGURE 7. Saturated turn-off switching time waveform and test circuit.
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