參數(shù)資料
型號(hào): JANS2N3637L
廠商: MICROSEMI CORP
元件分類: 功率晶體管
英文描述: PNP SILICON AMPLIFIER TRANSISTOR
中文描述: 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
文件頁(yè)數(shù): 9/20頁(yè)
文件大?。?/td> 128K
代理商: JANS2N3637L
MIL-PRF-19500/560E
17
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50
.
2. Sampling oscilloscope: Zin ≥ 1 M, Cin ≤ 20 pF, rise time ≤ 20 ns.
3. ton conditions: IC = 2 A, IB1 = 200 mA.
FIGURE 6. Saturated turn-on switching waveform and time test circuit.
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50
.
2. Sampling oscilloscope: Zin ≥ 1 M, Cin ≤ 20 pF, rise time ≤ 20 ns.
3. ton conditions: CI = 2 A, IB1 = IB2 = 200 mA.
FIGURE 7. Saturated turn-off switching time waveform and test circuit.
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