- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353841 > JANS2N5415S TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 1A I(C) | TO-39 PDF資料下載
參數(shù)資料
| 型號： | JANS2N5415S |
| 英文描述： | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 1A I(C) | TO-39 |
| 中文描述： | 晶體管|晶體管|進步黨| 200伏五（巴西）總裁| 1A條一（c）| TO - 39封裝 |
| 文件頁數(shù)： | 18/19頁 |
| 文件大小： | 103K |
| 代理商： | JANS2N5415S |
MIL-PRF-19500/512E
8
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characterics are as specified in 1.3, 1.4 and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3 herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
相關PDF資料 |
PDF描述 |
|---|---|
| JANS2N5415UA | BJT |
| JANS2N5416 | TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 1A I(C) | TO-39 |
| JANS2N5416S | TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 1A I(C) | TO-39 |
| JANS2N5416UA | BJT |
| JANS2N5664 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-66 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANS2N5415UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N5416 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N5416S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N5416U4 | 功能描述:TRANS PNP 300V 1A 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/485 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1A 電壓 - 集射極擊穿（最大值）:300V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:2V @ 5mA，50mA 電流 - 集電極截止（最大值）:1mA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:30 @ 50mA，10V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應商器件封裝:U4 標準包裝:1 |
| JANS2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
發(fā)布緊急采購，3分鐘左右您將得到回復。