參數(shù)資料
型號(hào)： JANS2N5665
英文描述： TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-66
中文描述： 晶體管|晶體管|叩| 300V五（巴西）總裁| 3A條一（c）|至66
文件頁(yè)數(shù)： 19/19頁(yè)
文件大?。?/td> 103K
代理商： JANS2N5665
MIL-PRF-19500/512E
9
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Required (see 4.3.2)
9
hFE2, ICBO2
Not applicable
11
ICBO2; hFE2; ICBO2 = 100 percent of
initial value or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
ICBO2 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
Subgroup 2 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of
MIL-STD-750; VCB = 10-20 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power
dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices
shall be permitted.
相關(guān)PDF資料
PDF描述
JANS2N5666 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-5
JANS2N5666S TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39
JANS2N5667 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-5
JANS2N5667S TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 5A I(C) | TO-39
JANSF2N7383 -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANS2N5666 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack
JANS2N5666S 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack
JANS2N5666U3 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack
JANS2N5667 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack
JANS2N5667S 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack
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