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參數(shù)資料
| 型號： | JANS2N5666 |
| 英文描述： | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-5 |
| 中文描述： | 晶體管|晶體管| npn型| 200伏五（巴西）總裁| 3A條一（c）|至5 |
| 文件頁數(shù)： | 8/19頁 |
| 文件大?。?/td> | 103K |
| 代理商： | JANS2N5666 |
MIL-PRF-19500/512E
16
NOTES:
1.
The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent, and the generator source Z
shall be 50
.
2.
Sampling oscilloscope: ZIN ≥ 100 k; Cin ≤ 12 pF, rise time(tr) ≤ 5 ns.
FIGURE 6. Delay and rise time, test circuit.
NOTES:
1.
The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50
.
2.
Sampling oscilloscope: ZIN ≥ 100 k; Cin ≤ 12 pF, rise time(tr) ≤ 5 ns.
FIGURE 7. Storage and fall time, test circuit.
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