參數(shù)資料
型號(hào)： JANS2N6849U
英文描述： -100V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package
中文描述： - 100V的單P溝道高可靠性的18 MOSFET的引腳LCC封裝
文件頁(yè)數(shù)： 21/21頁(yè)
文件大?。?/td> 137K
代理商： JANS2N6849U
MIL-PRF-19500/368F
9
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-PRF-19500
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen
(see table IV
Measurement
of MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
3c
Thermal impedance (see 4.3.3)
7
Hermetic seal (optional)
(1)
9
I
CBO1
and h
FE1
Not applicable
10
48 hours minimum
11
I
CBO1
; h
FE1
;
I
CB01 = 100 percent of initial value
or 0.5
A dc, whichever is greater;
h
FE1
=
± 15 percent of initial value.
I
CBO1
and h
FE1
12
See 4.3.2, 240 hours minimum
See 4.3.2, 80 hours minimum
13
Subgroups 2 and 3 of table I herein;
I
CB01
= 100 percent of initial value or 200 nA
dc, whichever is greater;
h
FE1
=
± 15 percent of initial value.
Subgroup 2 of table I herein;
I
CB01
= 100 percent of initial value or 200 nA dc,
whichever is greater;
h
FE1
=
± 15 percent of initial value.
14
Optional
Optional (1)
(1) Hermetic seal test shall be performed in either screen 7 or screen 14.
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500. As a minimum, die shall be 100 percent probed to ensure the assembled chips will meet the
requirements of table I, group A, subgroup 2.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be
applied to achieve TJ = +135
°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.
4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 MIL-STD-750. Read and record data (ZθJX) shall be supplied to the qualifying activity on one lot
(random sample of 500 devices minimum) prior to shipment. The following conditions shall apply.
a. IH forward heating current ----------- 250 mA.
b. tH heating time -------------------------- 10 ms.
c. IM measurement current -------------- 10 mA.
d. tMD measurement delay time ------- 30 - 60 s.
e. VCE collector-emitter voltage ------- 10 V dc minimum.
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 20 °C/W.
相關(guān)PDF資料
PDF描述
JANS2N7237U -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package
JANSH2N7298 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-254AA
JANSH2N7381 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-257AA
JANTX(V)2N6796U
JANTX2N1131 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANS2N6851 制造商:International Rectifier 功能描述:HEXFET, -200V, -4.0A, 0.80 OHM - Rail/Tube
JANS2N6851U 制造商:International Rectifier 功能描述:HEXFET, HI-REL, QPL, SPACE - Bulk
JANS2N6987 制造商:Microsemi Corporation 功能描述:PNP QUAD TRANSISTOR - Waffle Pack
JANS2N6987U 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.6A 20-Pin LLCC 制造商:Microsemi Corporation 功能描述:PNP QUAD TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP QUAD TRANSISTOR - Waffle Pack
JANS2N6988 制造商:Microsemi Corporation 功能描述:PNP QUAD TRANSISTOR - Waffle Pack
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*