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參數(shù)資料
| 型號(hào)： | JANSF2N7390U |
| 英文描述： | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a 18-pin LCC package |
| 中文描述： | - 200伏300kRad高可靠性單P溝道工貿(mào)署在18硬化MOSFET的引腳LCC封裝 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 269K |
| 代理商： | JANSF2N7390U |
2
www.irf.com
IRHE7230, JANSR2N7262U
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
—
V
VGS =0 V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.25
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source
—
0.35
VGS = 12V, ID = 3.5A
On-State Resistance
—
0.36
VGS = 12V, ID = 5.5A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
2.5
—
S ( )VDS > 15V, IDS = 3.5A
IDSS
Zero Gate Voltage Drain Current
—
25
VDS= 160V,VGS=0V
—
250
VDS = 160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
50
VGS = 12V, ID = 5.5A
Qgs
Gate-to-Source Charge
—
10
nC
VDS = 100V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
25
td(on)
Turn-On Delay Time
—
25
VDD = 100V, ID = 5.5A,
tr
Rise Time
—
40
VGS = 12V, RG = 7.5
td(off)
Turn-Off Delay Time
—
60
tf
Fall Time
—
45
LS + LD
Total Inductance
—
6.1
—
Ciss
Input Capacitance
—
1100
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
250
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
55
—
nA
nH
ns
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
5.0
RthJPCB
Junction-to-PC Board
—
19
—
Solder to a copper clad PC Board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
5.5
ISM
Pulse Source Current (Body Diode)
——
22
VSD
Diode Forward Voltage
—
1.4
V
Tj = 25°C, IS = 5.5A, VGS = 0V
trr
Reverse Recovery Time
—
400
nS
Tj = 25°C, IF = 5.5A, di/dt ≥ 100A/s
QRR Reverse Recovery Charge
—
3.0
C
VDD ≤ 25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
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