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參數(shù)資料
| 型號： | JANSF2N7432 |
| 英文描述： | 100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| 中文描述： | 100V的600kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 254AA封裝 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 107K |
| 代理商： | JANSF2N7432 |
www.irf.com
3
Pre-Irradiation
IRHY7130CM
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100KRads(Si)1
300 - 1000K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
100
—
100
—
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
1.25
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
—
100
—
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
—
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
—
25
—
25
A
VDS=80V, VGS =0V
RDS(on)
Static Drain-to-Source
—
0.18
—
0.24
VGS = 12V, ID =9.1A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source
—
0.18
—
0.24
VGS = 12V, ID =9.1A
On-State Resistance (TO-257AA)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHY7130, (JANSR2N7380)
2. Part numbers IRHY3130 , IRHY4130 and IRHY8130 (JANSF2N7380, JANSG2N7380 and JANSH2N7380)
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage
—
1.8
—
1.8
V
VGS = 0V, IS = 14.4A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
VDS
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e
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(
e
g
n
a
R
)
m
(
)
V
(
S
D
V
0
=
S
G
V
@V
5
-
=
S
G
V
@V
0
1
-
=
S
G
V
@V
5
1
-
=
S
G
V
@V
0
2
-
=
S
G
V
@
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C8
25
8
23
40
0
10
0
10
0
10
80
6
r
B8
.
6
35
0
39
30
0
10
90
70
5
—
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