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參數(shù)資料
| 型號： | JANSR2N7394U |
| 英文描述： | 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | 60V的100kRad高可靠性單個N -溝道工貿(mào)硬化的貼片MOSFET的- 1封裝 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 269K |
| 代理商： | JANSR2N7394U |
www.irf.com
5
Pre-Irradiation
IRHE7230, JANSR2N7262U
Post-Irradiation
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
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| JANSR2N7424U | -60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
| JANSR2N7425 | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package |
| JANSR2N7425U | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSR2N7396 | 制造商:Microwave Semiconductor 功能描述: |
| JANSR2N7399 | 制造商:Harris Corporation 功能描述: |
| JANSR2N7422 | 制造商:International Rectifier 功能描述: |
| JANSR2N7422U | 制造商:International Rectifier 功能描述:TRAN 100V 100K RAD - Rail/Tube |
| JANSR2N7423 | 制造商:International Rectifier 功能描述:200V 15.000A HEXFET RADHARD - Rail/Tube |
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