參數(shù)資料
型號(hào)： JANTX2N2221AUA
英文描述： TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
中文描述： 晶體管|晶體管|叩| 40V的五（巴西）總裁| 800mA的一（c）|貼片
文件頁(yè)數(shù)： 4/23頁(yè)
文件大小： 135K
代理商： JANTX2N2221AUA
MIL-PRF-19500/545D
12
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers
(or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to
the application of final lead finish.
4.4.3. Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
Subgroup
Method
Conditions
C2
2036
Test condition E, (not applicable for U3 packages).
C6
1037
VCB = 10 - 30 V dc, 6,000 cycles.
4.4.4. Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table IX of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
Subgroup
Method
Condition
Sampling plan
E1
1051
500 cycles
45 devices, c = 0
E2
1039
Condition A: 500 hours
45 devices, c = 0
E3
Not applicable
E4
3131
R
θJC = 15°C/W maximum (TO-205) 22 devices, c = 0 (See 4.5.2)
R
θJC = 1.75°C/W maximum (U3)
22 devices, c = 0 (See 4.5.2)
See 4.5.2
E5
Not applicable
4.5. Methods of inspection and test. Methods of inspection and test shall be as specified in the appropriate tables
and as follows.
4.5.1. Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of
MIL-STD-750.
相關(guān)PDF資料
PDF描述
JANTX2N2221AUB TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | CHIP
JANTX2N2222AUA TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
JANTX2N2222AUB TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
JANTX2N2369A TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-18
JANTX2N2369AU TRANSISTOR | BJT | NPN | 15V V(BR)CEO | LLCC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTX2N2221AUB 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin UB 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN UB - Waffle Pack
JANTX2N2222 制造商: 功能描述: 制造商:undefined 功能描述:
JANTX2N2222A 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
JANTX2N2222AL 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-18 - Bulk
JANTX2N2222AUA 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 4-Pin UA 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Waffle Pack
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