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參數資料
| 型號： | JANTX2N2945A |
| 英文描述： | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 100MA I(C) | TO-46 |
| 中文描述： | 晶體管|晶體管|進步黨| 20V的五（巴西）總裁| 100mA的一（c）|的TO - 46 |
| 文件頁數： | 11/21頁 |
| 文件大?。?/td> | 137K |
| 代理商： | JANTX2N2945A |
MIL-PRF-19500/368F
19
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a.
Title, number, and date of this specification.
b.
Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c.
Packaging requirements (see 5.1).
d.
Lead finish (see 3.4.1).
e.
Type designation and quality assurance level.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center Columbus, ATTN: DSCC/VQE, P. O. Box 3990, Columbus, OH 43216-5000.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| JANTX2N2946A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 |
| JANTX2N3019 | 功能描述:兩極晶體管 - BJT JANTX2N3019 RoHS:否 制造商:ON Semiconductor 配置:Single 晶體管極性:NPN 集電極—基極電壓 VCBO:140 VDC 集電極—發(fā)射極最大電壓 VCEO:80 VDC 發(fā)射極 - 基極電壓 VEBO:7 VDC 集電極—射極飽和電壓:0.2 V 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:15 mA 最大工作溫度:+ 200 C 安裝風格:Through Hole 封裝 / 箱體:TO-5 |
| JANTX2N3019S | 功能描述:兩極晶體管 - BJT JANTX2N3019S RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| JANTX2N3027 | 制造商:Microsemi Corporation 功能描述:Thyristor SCR 30V 8A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:THYRISTOR SCR 30V 8A 3PIN TO-18 - Bulk |
| JANTX2N3028 | 制造商:Microsemi Corporation 功能描述:Thyristor SCR 60V 8A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:THYRISTOR SCR 60V 8A 3PIN TO-18 - Bulk 制造商:Microsemi 功能描述:Thyristor SCR 60V 8A 3-Pin TO-18 |
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