參數(shù)資料
型號(hào)： JANTX2N3735L
英文描述： TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-5VAR
中文描述： 晶體管|晶體管|叩| 50V五（巴西）總裁| 1.5AI（丙）|至5VAR
文件頁(yè)數(shù)： 4/20頁(yè)
文件大小： 128K
代理商： JANTX2N3735L
MIL-PRF-19500/560E
12
* 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E.
C5
3131
See 4.5.3.
C6
1037
For solder die attach: VCB ≥ 10 V dc, TA = Room ambient as defined in the
general requirements of MIL-STD-750. 6,000 cycles.
*
C6
1027
For eutectic die attach: VCB ≥ 10 V dc, adjust PT to achieve TJ = + 175°C min.
* 4.4.4 Group E inspection, Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table IX of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in
accordance with group A, subgroup 2 herein. Group E inspection shall be performed for qualification or re-
qualification only. In case qualification was awarded to a prior revision of the spec sheet that did not request the
performance of table II tests, the tests specified in table II herein must be performed to maintain qualification.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Thermal resistance (to be performed for qualification inspection only). The thermal resistance
measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall
apply:
a.
Collector current magnitude during power application shall be 0.15 A dc.
b.
Collector to emitter voltage magnitude shall be 20 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference point temperature shall be + 25
°C ≤ T
R ≤ +35° C and recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case.
f.
Maximum limit shall be R
θJC = 17.5° C/W for TO-39 devices and RθJC = 1.7.5° C/W for U3 devices.
相關(guān)PDF資料
PDF描述
JANTX2N3737 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-46
JANTX2N3737UB BJT
JANTX2N3739 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 250MA I(C) | TO-66
JANTX2N3743 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 50MA I(C) | TO-39
JANTX2N3766 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-66
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTX2N3737 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 40V 1.5A 3-Pin TO-46 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 40V 1.5A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk
JANTX2N3737UB 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Waffle Pack
JANTX2N3739 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 300V 1A 3-Pin(2+Tab) TO-66 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 1A 3PIN TO-66 - Bulk 制造商:Microsemi Corporation 功能描述:TRANS NPN 300V 1A 20W TO-66 制造商:Microsemi 功能描述:Trans GP BJT NPN 300V 1A 3-Pin(2+Tab) TO-66
JANTX2N3740 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 4A 3-Pin(2+Tab) TO-66 制造商:Aeroflex / Metelics 功能描述:PNP POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk
JANTX2N3741 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 4A 3-Pin(2+Tab) TO-66 制造商:Aeroflex / Metelics 功能描述:PNP POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk
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