參數(shù)資料
型號(hào)： JANTX2N6786U
廠商： International Rectifier
英文描述： HEXFET TRANSISTOR
中文描述： 的HEXFET晶體管
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 146K
代理商： JANTX2N6786U
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
400
—
Typ
—
0.37
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
0.87
—
—
—
—
—
—
—
—
3.6
3.7
4.0
—
25
250
VGS = 10V, ID = 0.8A
VGS = 10V, ID = 1.25A
VDS = VGS, ID = 250
μ
A
VDS > 15V, IDS = 0.8A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 1.25A
VDS = Max Rating x 0.5
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
8.4
1.6
5.0
15
20
35
30
—
nC
VDD = 15V, ID = 1.25A,
RG = 7.5
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
190
65
24
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to-PC board
Min Typ Max
—
—
—
—
Units
Test Conditions
8.3
27
soldered to a copper-clad PC board
°C/W
Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
Modified MOSFET sym-
inductances.
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
1.25
5.5
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
540
4.5
V
ns
μ
C
T
j
= 25°C, IS = 1.25A, VGS = 0V
Tj = 25°C, IF = 1.25A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
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