參數(shù)資料
型號(hào)： JANTXV1N4150UR-1
元件分類(lèi)： 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述： 0.3 A, SILICON, SIGNAL DIODE, DO-213AA
封裝： HERMETIC SEALED, GLASS, LL34, MELF-2
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 227K
代理商： JANTXV1N4150UR-1
1
Revision Date: 12/7/2009
New Product
Silicon Switching Diodes
1N4150UR, 1N4150UR-1 & 1N3600UR
Maximum Ratings
Operating & Storage Temperature: -65 °C to +175 °C
Operating Current: 300 mA @ TA = +25 °C
Derating: 2.0 mA dc/°C Above TL = + 75 °C @ L = 3/8”
Surge Current A: 2A (pk) tp = 8.3 mS, VRM = 0
Surge Current B:
4A (pk) tp = 1 us, VRM = 0
Features
Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231
Metallurgically Bonded
Hermetically Sealed
Double Plug Construction
VBR
VRWM
IR1
IR2
CTrr
TYPE
VR = 50 Vdc
IR = 0; f = 1 MHz
IF = IR = 10 to 100 mA dc
Number
IR = 10 μA
TA = 25 °C
TA =150°C
ac signal = 50 mV (p-P)
RL = 100 Ω
V dc
V (pk)
μA dc
pF
ns
1N3600UR
75
50
0.1
100
2.5
4.0
1N4151UR, -1
75
50
0.1
100
2.5
4.0
Electrical Specifications @ +25 C (Unless Otherwise Specified)
Outline Drawing
VF1
VF2
VF3
VF4
VF5
IF = 1 mA dc
IF = 10 mA dc
IF = 50 mA dc
IF = 100 mA dc
IF = 200 mA dc
Limits
(Pulsed)
V dc
minimum
0.540
0.660
0.760
0.820
0.870
maximum
0.620
0.740
0.860
0.920
1.000
Forward Voltage Limits - All Types
LEADED DESIGN DATA
CASE: DO – 213AA, Hermetically sealed glass case.
(MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (RJEC): 100 °C/W maximum
THERMAL IMPEDANCE: (ZJX): 70 °C/W maximum
POLARITY: Cathode end is banded.
D
G
G1
F
S
相關(guān)PDF資料
PDF描述
JANTX1N4150UR-1 0.3 A, SILICON, SIGNAL DIODE, DO-213AA
JAN1N4150 0.2 A, SILICON, SIGNAL DIODE, DO-35
JANTX1N4150 0.2 A, SILICON, SIGNAL DIODE, DO-35
JANTX1N3600 0.2 A, SILICON, SIGNAL DIODE, DO-7
JAN1N4150-1 0.2 A, SILICON, SIGNAL DIODE, DO-35
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參數(shù)描述
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