參數(shù)資料
型號(hào)： JANTXV1N5819UR-1
廠商： SENSITRON SEMICONDUCTOR
元件分類： 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述： 1 A, SILICON, SIGNAL DIODE, DO-213AB
封裝： HERMETIC SEALED, MELF-2
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 53K
代理商： JANTXV1N5819UR-1
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web - www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 193, REV. C
HERMETIC AXIAL LEAD / MELF
SCHOTTKY BARRIER DIODE
DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE.
MAXIMUM RATINGS
All ratings are at TA = 25
oC unless otherwise specified.
RATING
CONDITIONS
MIN
TYP
MAX
UNIT
Peak Inverse Voltage
(PIV)
←
-
45
Vdc
Average DC Output
Current (Io)
↑
-
1.0
Amps
Peak Single Cycle Surge
Current (Ifsm)
tp = 8.3 ms Single Half
Cycle Sine Wave,
Superimposed On
Rated Load
-
25
Amps(pk)
Thermal Resistance (θJL)
Junction to Lead
d = 0.375”
-
70
°C/W
Thermal Resistance (
θ
JEC)
Junction to Endcap
-
40
°C/W
Junction Temperature (TJ)
-
-55
-
+125
°C
Operating Temperature
(Top)
-
-55
-
+125
°C
Storage Temp. (Tstg)
-
-55
-
+150
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
CONDITIONS
MIN
TYP
MAX
UNIT
Maximum Forward
Voltage (Vf)
IF = 1.0A (300 sec
pulse, duty cycle <
2%)
-
0.49
Volts
Maximum Instantaneous
Reverse Current At Rated
(PIV)
TA = 25° C
TA = 100° C
-
0.05
4.0
Amps
mAmps
Junction Capacitance (CJ)
VR = 5 Vdc
0.01
≤ f ≤ 1MHz
Vsig = 15 mV p-p
-
70
pF
Notes: - All ratings are at TA = 25°C unless otherwise specified.
- Maximum storage temperature range: -55
°C to +150°C.
- Maximum operating temperature range: -55
°C to +125°C (1N5819-1, 1N5819UR-1).
← Derate linearly at 4.5 V/°C above T
L or TEC = +100°C (1N5819-1), where TEC is at L = .375 inch.
↑ Derate linearly at 14 mA/°C above T
L or TEC = +55°C (1N5819-1), where TEC is at L = .375 inch.
1N5819-1
1N5819UR-1
JAN
JANTX
JANTXV
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