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參數(shù)資料
| 型號： | JANTXV1N826URTR-1-2 |
| 廠商： | Microsemi Corporation |
| 英文描述： | 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
| 中文描述： | 6.2 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 232K |
| 代理商： | JANTXV1N826URTR-1-2 |
6.2 & 6.55 Volt Temperature Compensated
Zener Reference Diodes
SCOTTSDALE DIVISION
1N821 thru 1N829A-1 DO-7
W
M
.
C
1
*ELECTRICAL CHARACTERISTICS @ 25
o
C, unless otherwise specified
ZENER
VOLTAGE
(Note 1 and 4)
V
Z
@ I
ZT
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
ZENER
IMPEDANCE
(Note 2)
Z
ZT
@ I
ZT
MAXIMUM
REVERSE
CURRENT
I
R
@ 3 V
μA
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
VOLTAGE
TEMPERATURE
STABILITY
(
V
ZT
MAX)
-55
o
C to +100
o
C
(Note 3 and 4)
EFFECTIVE
TEMPERATURE
COEFFICIENT
α
VZ
JEDEC
TYPE NUMBER
(Note 1, 5 & 6)
VOLTS
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
6.2 – 6.9
5.9 – 6.5
5.9 – 6.5
6.2 – 6.9
5.9 – 6.5
5.9 – 6.5
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
15
10
15
15
10
15
15
10
15
15
10
15
15
10
mV
96
96
96
48
48
48
19
19
20
9
9
10
5
5
%/
o
C
0.01
0.01
0.01
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
1N821
1N821A
1N822
1N823
1N823A
1N824
1N825
1N825A
1N826
1N827
1N827A
1N828
1N829
1N829A
*JEDEC Registered Data.
Double Anode; electrical specifications apply under both bias polarities.
NOTES:
1.
Add a “-1” suffix for internal metallurgical bond. When ordering devices with tighter tolerances than specified for the V
Z
voltage nominal of
6.35 V, add a hyphened suffix to the part number for desired tolerance, e.g. 1N827-1-2%, 1N829-1-1%, 1N829A-1%, 1N829A-1-1%, etc.
2.
Zener impedance measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25
C.
3.
The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV
change at discrete temperature between the established limits.
4.
Voltage measurements to be performed 15 seconds after application of dc current.
5.
1N821, 1N823, 1N825, 1N827, and 1N829 also have qualification to MIL-PRF-19500/159 by adding the JAN,
JANTX, JANTXV, or
JANS prefix to part numbers as well as the “-1” suffix; e.g. JANTX1N827-1, JANTXV1N829-1, etc.
6.
Designate Radiation Hardened devices with “RH” prefix instead of “1N”, e.g. RH829A instead of 1N829A.
GRAPHS
C
o
C
C
o
C
FIGURE 1
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT.
The curve shown in Figure 1 is typical of the diode series and
greatly simplifies the estimation of the Temperature Coefficient
(TC) when the diode is operated at currents other than 7.5mA.
EXAMPLE: A diode in this series is operated at a current of
7.5mA and has specified Temperature Coefficient (TC) limits of
+/-0.005%/
C. To obtain the typical Temperature Coefficient
limits for this same diode operated at a current of 6.0mA, the
new TC limits (%/
C) can be estimated using the graph in
FIGURE 1.
At a test current of 6.0mA the change in Temperature Coefficient
(TC) is approximately –0.0006%.
C. The algebraic sum of +/-
0.005%
C and –0.0006%/
C gives the estimated limits of
+0.0044%/
C and -0.0056%/
C.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
10-27-2003 REV C
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