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參數(shù)資料
| 型號(hào)： | JANTXV2N3227UB |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁(yè)數(shù)： | 18/19頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | JANTXV2N3227UB |
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MIL-PRF-19500/512E
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2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characterics are as specified in 1.3, 1.4 and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3 herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
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| JANTXV2N3250A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JANTXV2N3251A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JANTXV2N3418 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5 |
| JANTXV2N3418S | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) |
| JANTXV2N3419 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-5 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N3250A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JANTXV2N3251A | 制造商:LOCKHD 功能描述: |
| JANTXV2N3251AUB | 功能描述:TRANS PNP 60V 0.2A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/323 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:200mA 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:500mV @ 5mA，50mA 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:360mW 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無(wú)引線 供應(yīng)商器件封裝:UB 標(biāo)準(zhǔn)包裝:1 |
| JANTXV2N3418 | 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 3A 3PIN TO-5 - Bulk |
| JANTXV2N3418S | 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
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