- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353845 > JANTXV2N3251A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 PDF資料下載
參數(shù)資料
| 型號： | JANTXV2N3251A |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 200mA的一（c）|到18 |
| 文件頁數(shù)： | 3/21頁 |
| 文件大?。?/td> | 137K |
| 代理商： | JANTXV2N3251A |
MIL-PRF-19500/368F
11
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method
Condition
1
1039
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall be applied to
achieve TJ = +150
°C minimum using a minimum of PD = 75 percent of maximum rated PT as
defined in 1.3. n = 45 devices, c = 0.
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production, however,
group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0.
3
1032
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or
from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection
lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed table I, group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in
accordance with table I, group A, subgroup 2 and 4.5.3 herein.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E, except the UA package.
C6
1026
1,000 hours at VCB = 10 V dc; power shall be applied to achieve
TJ = +150
°C minimum and a minimum of PD = 75 percent of maximum
rated PT as defined in 1.3.
* 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E.
C5
3131
See 4.5.2.
C6
Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot
containing the intended package type and lead finish procured to the same specification which is submitted to and
passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the
intended package type shall be considered as complying with the requirements for that subgroup.
相關PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N3418 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5 |
| JANTXV2N3418S | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) |
| JANTXV2N3419 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-5 |
| JANTXV2N3419S | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39 |
| JANTXV2N3420 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N3251AUB | 功能描述:TRANS PNP 60V 0.2A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/323 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:200mA 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:500mV @ 5mA，50mA 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:360mW 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應商器件封裝:UB 標準包裝:1 |
| JANTXV2N3418 | 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 3A 3PIN TO-5 - Bulk |
| JANTXV2N3418S | 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JANTXV2N3419 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 3A 3-Pin TO-5 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 3A 3PIN TO-5 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT NPN 80V 3A 3-Pin TO-5 |
| JANTXV2N3419S | 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 3A 3PIN TO-39 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。