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參數(shù)資料
| 型號(hào)： | JANTXV2N5039 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN HIGH POWER SILICON TRANSISTOR |
| 中文描述： | 20 A, 75 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | SIMILAR TO TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 71K |
| 代理商： | JANTXV2N5039 |
2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
V
CE
= 90 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 Adc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 20 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
SAFE OPERATING AREA
DC Tests
T
C
= 25
0
C, 1 Cycle, t = 10 ms
Test 1
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
Test 2
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
Test 3
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
I
CES
10
η
Adc
I
EBO
10
η
Adc
h
FE
100
50
90
50
15
300
200
200
V
CE(sat)
0.2
0.5
Vdc
V
BE(sat)
1.1
Vdc
h
fe
80
400
h
fe
5.0
20
C
obo
12
p
C
ibo
60
pF
V
CE
=
10 Vdc
I
C
= 500 mAdc
I
C
= 180 mAdc
V
CE
=
40 Vdc
I
C
= 125 mAdc
I
C
= 45 mAdc
V
CE
=
80 Vdc
I
C
= 60 mAdc
I
C
= 22.5 mAdc
120101
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