- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353811 > JANTXV2N5794U TRANSISTOR | BJT | PAIR | NPN | 40V V(BR)CEO | 600MA I(C) | LLCC PDF資料下載
參數(shù)資料
| 型號： | JANTXV2N5794U |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 40V V(BR)CEO | 600MA I(C) | LLCC |
| 中文描述： | 晶體管|晶體管|一對|叩| 40V的五（巴西）總裁| 600毫安一（c）| LLCC |
| 文件頁數(shù)： | 19/19頁 |
| 文件大小： | 103K |
| 代理商： | JANTXV2N5794U |
MIL-PRF-19500/512E
9
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Required (see 4.3.2)
9
hFE2, ICBO2
Not applicable
11
ICBO2; hFE2; ICBO2 = 100 percent of
initial value or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
ICBO2 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
Subgroup 2 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of
MIL-STD-750; VCB = 10-20 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power
dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices
shall be permitted.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N6988 | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | FP |
| JANTXV2N6989 | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 50V V(BR)CEO | 800MA I(C) | TO-116 |
| JANTXV2N6989U | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 50V V(BR)CEO | 800MA I(C) | TO-116 |
| JANTXV2N6990 | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 50V V(BR)CEO | 800MA I(C) | FP |
| JANTXV2N6990U | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N5795 | 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Bulk |
| JANTXV2N5796 | 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Bulk |
| JANTXV2N5796U | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.6A 6-Pin Case U 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 6PIN U - Bulk |
| JANTXV2N6032 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 90V 50A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 90V 50A 3PIN TO-3 - Bulk |
| JANTXV2N6033 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 120V 40A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 40A 3PIN TO-3 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。