參數(shù)資料
型號: JANTXV2N6051
英文描述: TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 12A I(C) | TO-3
中文描述: 晶體管|晶體管|達(dá)林頓|進(jìn)步黨| 80V的五(巴西)總裁| 12A條一(c)|至3
文件頁數(shù): 16/21頁
文件大?。?/td> 137K
代理商: JANTXV2N6051
MIL-PRF-19500/368F
4
Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LD
.016
.021
0.41
0.53
3, 10
LL
See notes 10, 12, and 13
L1
.050
1.27
11
LU
.016
.019
0.41
0.48
4, 10
M
.1414 Nom
3.591 Nom
7
N
.0707 Nom
1.796 Nom
7
P
.100
2.54
5
Q
6
TL
.029
.045
0.74
1.14
9
TW
.028
.034
0.71
0.86
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane.
4. Measured in the zone .50 inch (1.27 mm) from the seating plane.
5. Variations on dimension CD in this zone shall not exceed .010 inch (0.25 mm).
6. Outline in this zone is not controlled.
7. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, - 0.00 mm) below the seating plane of
the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a
maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead
tolerance.
8. The collector shall be electrically connected to the case.
9. Measured from the maximum diameter of the actual device.
10. All three leads (see 3.4.1).
11. Diameter of leads in this zone is not controlled.
12. For transistor types 2N3439 and 2N3440, L = .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum.
13. For transistor types 2N3439L and 2N3440L, L = 1.500 inches (38.10 mm) minimum, and 1.750 inches
(44.45 mm) maximum.
FIGURE 1. Physical dimensions - Continued.
相關(guān)PDF資料
PDF描述
JANTXV2N6052 TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 12A I(C) | TO-3
JANTXV2N6193 TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-39
JANTXV2N6211 TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 2A I(C) | TO-66
JANTXV2N6212 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 2A I(C) | TO-66
JANTXV2N6213 TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-66
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N6052 制造商:Microsemi Corporation 功能描述:Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON PNP 100V 12A 2PIN TO-3 - Bulk
JANTXV2N6058 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON NPN 80V 12A 3PIN TO-3 - Bulk
JANTXV2N6059 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 100V 12A 3-Pin(2+Tab) TO-3 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON NPN 100V 12A 3PIN TO-3 - Bulk
JANTXV2N6193 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 100V 5A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk
JANTXV2N6193U3 制造商:Microsemi Corporation 功能描述:TRANSISTSOR, PNP - Bulk