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參數(shù)資料
| 型號： | JANTXV2N6250 |
| 英文描述： | TRANSISTOR | BJT | NPN | 275V V(BR)CEO | 10A I(C) | TO-3 |
| 中文描述： | 晶體管|晶體管|叩| 275V五（巴西）總裁| 10A條一（c）|至3 |
| 文件頁數(shù)： | 16/21頁 |
| 文件大小： | 137K |
| 代理商： | JANTXV2N6250 |
MIL-PRF-19500/368F
4
Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LD
.016
.021
0.41
0.53
3, 10
LL
See notes 10, 12, and 13
L1
.050
1.27
11
LU
.016
.019
0.41
0.48
4, 10
M
.1414 Nom
3.591 Nom
7
N
.0707 Nom
1.796 Nom
7
P
.100
2.54
5
Q
6
TL
.029
.045
0.74
1.14
9
TW
.028
.034
0.71
0.86
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane.
4. Measured in the zone .50 inch (1.27 mm) from the seating plane.
5. Variations on dimension CD in this zone shall not exceed .010 inch (0.25 mm).
6. Outline in this zone is not controlled.
7. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, - 0.00 mm) below the seating plane of
the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a
maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead
tolerance.
8. The collector shall be electrically connected to the case.
9. Measured from the maximum diameter of the actual device.
10. All three leads (see 3.4.1).
11. Diameter of leads in this zone is not controlled.
12. For transistor types 2N3439 and 2N3440, L = .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum.
13. For transistor types 2N3439L and 2N3440L, L = 1.500 inches (38.10 mm) minimum, and 1.750 inches
(44.45 mm) maximum.
FIGURE 1. Physical dimensions - Continued.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N6250T1 | 功能描述:TRANS NPN 275V 10A TO-3 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/510 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:10A 電壓 - 集射極擊穿（最大值）:275V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 1.25A，10A 電流 - 集電極截止（最大值）:1mA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:8 @ 10A，3V 功率 - 最大值:6W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:TO-254-3，TO-254AA（直引線） 供應商器件封裝:TO-254AA 標準包裝:1 |
| JANTXV2N6251 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 350V 10A 3-Pin(2+Tab) TO-3 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 10A 3PIN TO-3 - Bulk |
| JANTXV2N6251T1 | 制造商:Microsemi Corporation 功能描述:2N6251T1JANTXV - Bulk |
| JANTXV2N6274 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 100V 50A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 50A 3PIN TO-3 - Bulk |
| JANTXV2N6277 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 150V 50A 3PIN TO-3 - Bulk |
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