參數(shù)資料
型號： JANTXV2N6766
英文描述： 200V, 30A, N-Channel, Enhancement Mode Power MOSFET(200V, 30A,N溝道，增強模式MOS功率場效應(yīng)管)
中文描述： 為200V，30A條，N溝道，增強模式功率MOSFET（為200V，30A條，?溝道，增強模式馬鞍山功率場效應(yīng)管）
文件頁數(shù)： 4/5頁
文件大?。?/td> 62K
代理商： JANTXV2N6766
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
Breakdown Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain
Current
Gate -to-Source Leakage Forward
Gate -to-Source Leakage Reverse
On-state Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
400
V
V
GS
= 0V, I
D
=1.0 mA,
R
DS(on)
--
--
2.0
--
--
--
--
52
5.0
25
--
--
--
--
--
--
--
---
--
--
--
--
--
--
--
--
--
--
.300
.400
4.0
25
250
100
-100
110
18
65
35
190
170
130
V
GS
= 10 V, I
D
= 9.0 A
3
V
GS
= 10 V, I
D
= 14 A
3
V
DS
= V
GS
,
D
= 250 μA
V
DS
= 320 V, V
GS
= 0V
V
DS
= 320 V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20 V
V
GS
= -20 V
V
GS
= 10 V, I
D
= 14A
V
DS
= 200 V
See note 4
V
DD
= 200 V, I
D
= 14 A, R
G
= 2.35
See note 4
V
GS(th)
I
DSS
V
μA
I
GSS
I
GSS
Q
G(on)
Q
GS
Q
Gd
t
D(on)
t
r
t
D(off)
t
r
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
V
SD
Diode Forward Voltage
t
tr
Reverse Recovery Time
Min.
--
--
Typ.
--
--
Max.
1.7
1200
Units
V
ns
Test Conditions
T
J
= 25°C, I
S
= 14 A
3
,VG S= 0 V
T
J
= 25°C, I
F
= 14 A,di/dt<100A/μs
3
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Min.
--
--
--
Typ.
--
0.21
--
Max.
0.83
--
48
Units
Test Conditions
Mounting surface flat,
smooth, and greased
Typical socket mount
°C/W
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
D D
= 50 V, Starting T
J
= 25°C, L = 100 μH + 10%, R
G
= 25 , Peak I
L
= 14 A
3. Pulse width < 300 μs; Duty Cycle <2 %
4. See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N6768
Units
I
D
@ V
GS
= 10V, T
C
= 25°C
Continuous Drain Current
14
A
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
9.0
A
I
D M
Pulsed Drain Current
1
56
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
V
G S
Gate-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
2
11.3
4
mJ
I
AR
T
J
T
STG
Avalanche Current
1
Operating Junction
Storage Temperature Range
Lead Temperature
14
4
A
-55 to 150
°C
300(.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted
2N6764, JANTX2N6764, JANTXV2N6764
2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768
2N6770, JANTX2N6770, JANTXV2N6770
相關(guān)PDF資料
PDF描述
JANTXV2N6768 400V, 14A, N-Channel, Enhancement Mode Power MOSFET(400V, 14A,N溝道，增強模式功率MOS場效應(yīng)管)
JANTXV2N6770 500V, 12A, N-Channel, Enhancement Power Mode MOSFET(500V, 12A,N溝道，增強模式功率MOS場效應(yīng)管)
JANTX2N6764 100V, 38A, N-Channel, Enhancement Mode Power MOSFET(100V, 38A,N溝道，增強模式MOS功率場效應(yīng)管)
JANTX2N6766 200V, 30A, N-Channel, Enhancement Mode Power MOSFET(200V, 30A,N溝道，增強模式MOS功率場效應(yīng)管)
JAW050A1 Analog IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N6766T1 制造商:Microsemi Corporation 功能描述:2N6766T1JANTXV - Bulk
JANTXV2N6768 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET, TO-204AA, LAW - Bulk
JANTXV2N6768T1 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(3+Tab) TO-254 T/R 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk
JANTXV2N6770 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET (NFET) - Bulk
JANTXV2N6770T1 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-254 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk
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