- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353847 > JANTXV2N6851U -200V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package PDF資料下載
參數(shù)資料
| 型號： | JANTXV2N6851U |
| 英文描述： | -200V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package |
| 中文描述： | - 200伏單P溝道高可靠性的18 MOSFET的引腳LCC封裝 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大小： | 128K |
| 代理商： | JANTXV2N6851U |
MIL-PRF-19500/560E
14
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - continued
Emitter to base, cutoff
current
3061
Bias condition D; VEB = 6.0 V dc
IEBO
100
A dc
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 0.5 A dc, pulsed
(see 4.5.1)
hFE1
60
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 2.0 A dc; pulsed
(see 4.5.1)
hFE2
60
240
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 5.0 A dc; pulsed
(see 4.5.1)
hFE3
40
Collector to emitter
voltage (saturated)
3071
IC = 2.0 A dc; IB = 0.2 A dc; pulsed
(see 4.5.1)
VCE(SAT)1
0.7
V dc
Collector to emitter
voltage (saturated)
3071
IC = 5.0 A dc; IB = 0.5 A dc; pulsed
(see 4.5.1)
VCE(SAT)2
1.2
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 2.0 A dc;
IB = 0.2 A dc; pulsed (see 4.5.1)
VBE(SAT)1
1.2
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 5.0 A dc;
IB = 0.5 A dc; pulsed (see 4.5.1)
VBE(SAT)2
1.8
V dc
Subgroup 3
High - temperature
operation
TA = +150°C
Collector to emitter
cutoff current
3041
Bias condition A; VCE = 90 V dc; VBE
= 1.5 V dc;
ICEX2
1.0
mA dc
Low-temperature
operation
TA = -55°C
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 2.0 A dc; Pulsed
(see 4.5.1)
hFE4
12
See footnote at end of table.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N6896 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-204AA |
| JANTXV2N6898 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE |
| JANTXV2N6902 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-204AA |
| JANTXV2N6904 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA |
| JANTXV2N6987 | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | TO-116 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N6896 | 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET, TO-204AA, LAW - Bulk |
| JANTXV2N6897 | 制造商:Microsemi Corporation 功能描述:2N6897JANTXV - Bulk |
| JANTXV2N6898 | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET P-CH 2PIN TO-3 - Bulk |
| JANTXV2N6901 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 100V 1.69A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:2N6901JANTXV - Bulk |
| JANTXV2N6987 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 14PIN TO-116 - Bulk 制造商:Microsemi Corporation 功能描述:TRANS PNP QUAD 60V 600MA TO116 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。