參數(shù)資料
型號(hào)： JANTXV2N7218
英文描述： 100V, 28A, N-Channel, Enhancement Mode Power MOSFET(100V, 28A,N溝道，增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管)
中文描述： 100V的，第28A條，N溝道，增強(qiáng)模式功率MOSFET（100V的，第28A條，?溝道，增強(qiáng)模式功率馬鞍山場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 61K
代理商： JANTXV2N7218
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
Breakdown Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain
Current
Gate -to-Source Leakage Forward
Gate -to-Source Leakage Reverse
On-state Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
100
V
V
GS
= 0V, I
D
=1.0 mA,
R
DS(on)
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
---
--
--
--
--
--
--
--
--
--
--
0.077
0.125
4.0
25
250
100
-100
59
16
30.7
21
105
64
65
V
GS
= 10 V, I
D
= 20 A
3
V
GS
= 10 V, I
D
= 28 A
3
V
DS
= V
GS
,
D
= 250 μA
V
DS
= 80 V, V
GS
= 0V
V
DS
= 80 V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20 V
V
GS
= -20 V
V
GS
= 10 V, I
D
= 28A
V
DS
= 50 V
See note 4
V
DD
= 50 V, I
D
= 20A, R
G
=9.1
See note 4
V
GS(th)
I
DSS
V
μA
I
GSS
I
GSS
Q
G(on)
Q
GS
Q
Gd
t
D(on)
t
r
t
D(off)
t
r
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
V
SD
Diode Forward Voltage
t
tr
Reverse Recovery Time
Min.
--
--
Typ.
--
--
Max.
1.5
400
Units
V
ns
Test Conditions
T
J
= 25°C, I
S
= 28A
3
,VG S= 0 V
T
J
= 25°C, I
F
= 28A,di/dt<100A/μs
3
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Min.
--
--
--
Typ.
--
0.21
--
Max.
1.0
--
48
Units
Test Conditions
Mounting surface flat,
smooth, and greased
Typical socket mount
°C/W
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
D D
= 25V, Starting T
J
= 25°C, L >480 μH, R
G
= 25 , Peak I
L
= 28A
3. Pulse width < 300 μs; Duty Cycle <2 %
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N7218
Units
I
D
@ V
GS
= 10V, T
C
= 25°C
Continuous Drain Current
28
A
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
20
A
I
D M
Pulsed Drain Current
1
112
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
125
W
Linear Derating Factor
1.0
W/°C
V
G S
Gate-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
2
250
4
mJ
I
AR
Avalanche Current
1
28
4
A
E
AR
T
J
T
STG
Repetitive Avalanche Energy
1
Operating Junction
Storage Temperature Range
Lead Temperature
12.5
4
mJ
-55 to 150
°C
300(.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N7218U 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 28A 3SMD-1 - Bulk
JANTXV2N7219 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 18A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:200V SINGLE N-CH HI-REL MOSFET TO-254AA
JANTXV2N7219/SLDC 制造商:International Rectifier 功能描述:HEXFET, HI-REL, QPL - Bulk
JANTXV2N7219U 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 18A 3-Pin SMD-1 制造商:International Rectifier 功能描述:200V SINGLE N-CHANNEL HI-REL MOSFET SMD1 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 18A 3SMD-1 - Bulk
JANTXV2N7221 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 10A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:Single N-Channel 400 V 125 W 65 nC Hexfet Power Mosfet Through Hole - TO-254AA
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