參數(shù)資料
型號(hào): JANTXV2N7221
英文描述: 400V, 10A, N-Channel, Enhancement Mode Power MOSFET(400V, 10A,N溝道,增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管)
中文描述: 為400V,10A條,N溝道,增強(qiáng)模式功率MOSFET(為400V,10A條,?溝道,增強(qiáng)模式功率馬鞍山場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 61K
代理商: JANTXV2N7221
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
Breakdown Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain
Current
Gate -to-Source Leakage Forward
Gate -to-Source Leakage Reverse
On-state Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
200
V
V
GS
= 0V, I
D
=1.0 mA,
R
DS(on)
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
---
--
--
--
--
--
--
--
--
--
--
0.18
0.25
4.0
25
250
100
-100
60
10.6
37.6
20
105
58
67
V
GS
= 10 V, I
D
= 11 A
3
V
GS
= 10 V, I
D
= 18 A
3
V
DS
= V
GS
,
D
= 250 μA
V
DS
= 160 V, V
GS
= 0V
V
DS
= 160 V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20 V
V
GS
= -20 V
V
GS
= 10 V, I
D
= 18A
V
DS
= 100 V
See note 4
V
DD
= 100 V, I
D
= 11A, R
G
=9.1
See note 4
V
GS(th)
I
DSS
V
μA
I
GSS
I
GSS
Q
G(on)
Q
GS
Q
Gd
t
D(on)
t
r
t
D(off)
t
r
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
V
SD
Diode Forward Voltage
t
tr
Reverse Recovery Time
Min.
--
--
Typ.
--
--
Max.
1.5
500
Units
V
ns
Test Conditions
T
J
= 25°C, I
S
= 18A
3
,VG S= 0 V
T
J
= 25°C, I
F
= 18A,di/dt<100A/μs
3
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Min.
--
--
--
Typ.
--
0.21
--
Max.
1.0
--
48
Units
Test Conditions
Mounting surface flat,
smooth, and greased
Typical socket mount
°C/W
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
D D
= 50V, Starting T
J
= 25°C, L >2.1 mH, R
G
= 25 , Peak I
L
= 18A
3. Pulse width < 300 μs; Duty Cycle <2 %
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N7219
Units
I
D
@ V
GS
= 10V, T
C
= 25°C
Continuous Drain Current
18
A
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
11
A
I
D M
Pulsed Drain Current
1
72
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
125
W
Linear Derating Factor
1.0
W/°C
V
G S
Gate-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
2
450
4
mJ
I
AR
Avalanche Current
1
18
4
A
E
AR
T
J
T
STG
Repetitive Avalanche Energy
1
Operating Junction
Storage Temperature Range
Lead Temperature
12.5
4
mJ
-55 to 150
°C
300(.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
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