參數(shù)資料
型號： JANTXV2N7224
英文描述： 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
中文描述： 100V的單個N -溝道高可靠性MOSFET的采用TO - 254AA封裝
文件頁數(shù)： 6/21頁
文件大?。?/td> 137K
代理商： JANTXV2N7224
MIL-PRF-19500/368F
14
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Collector to base cutoff
current
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3036
Bias condition D
VCB = 450 V dc
VCB = 300 V dc
ICBO2
5
A dc
Base emitter voltage
(nonsaturated)
3066
Test condition A, pulsed (see 4.5.1),
IC = 50 mA dc, IB = 4 mA dc
VBE(sat)
1.3
V dc
Collector to emitter voltage
(saturated)
3071
Pulsed (see 4.5.1), IC = 50 mA dc,
IB = 4 mA dc
VCE(sat)
0.5
V dc
Forward-current transfer
ratio
3076
Pulsed (see 4.5.1), VCE = 10 V dc,
IC = 20 mA
hFE1
40
160
Forward-current transfer
ratio
3076
Pulsed (see 4.5.1), VCE = 10 V dc,
IC = 2 mA
hFE2
30
Forward-current transfer
ratio
3076
Pulsed (see 4.5.1), VCE = 10 V dc,
IC = 0.2 mA
hFE3
10
Subgroup 3
High temperature
operation:
TA = +150°C
Collector to emitter cutoff
current
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3036
Bias condition D
VCB = 360 V dc
VCB = 250 V dc
ICB03
100
A dc
Low temperature operation:
TA = -55
°C
Forward-current transfer ratio
3076
VCE = 10 V dc, IC = 20 mA dc,
pulsed (see 4.5.1)
hFE4
15
Subgroup 4
Pulse response:
3251
Test condition A
Turn-on time
VCC = 200 V dc, IC = 20 mA dc,
IB1 = 2 mA dc, see figure 5
ton
1
s
Turn-off time
VCC = 200 V dc, IC = 20 mA dc,
IB1 = -IB2 = 2 mA dc, see figure 5
toff
10
s
See footnotes at end of table.
相關PDF資料
PDF描述
JANTXV2N7224U 100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
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