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參數(shù)資料
| 型號： | JANTXV2N7224U |
| 英文描述： | 100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package |
| 中文描述： | 100V的單個N -溝道高可靠性的貼片MOSFET的- 1封裝 |
| 文件頁數(shù)： | 21/21頁 |
| 文件大?。?/td> | 137K |
| 代理商： | JANTXV2N7224U |
MIL-PRF-19500/368F
9
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-PRF-19500
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen
(see table IV
Measurement
of MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
3c
Thermal impedance (see 4.3.3)
7
Hermetic seal (optional)
(1)
9
I
CBO1
and h
FE1
Not applicable
10
48 hours minimum
11
I
CBO1
; h
FE1
;
I
CB01 = 100 percent of initial value
or 0.5
A dc, whichever is greater;
h
FE1
=
± 15 percent of initial value.
I
CBO1
and h
FE1
12
See 4.3.2, 240 hours minimum
See 4.3.2, 80 hours minimum
13
Subgroups 2 and 3 of table I herein;
I
CB01
= 100 percent of initial value or 200 nA
dc, whichever is greater;
h
FE1
=
± 15 percent of initial value.
Subgroup 2 of table I herein;
I
CB01
= 100 percent of initial value or 200 nA dc,
whichever is greater;
h
FE1
=
± 15 percent of initial value.
14
Optional
Optional (1)
(1) Hermetic seal test shall be performed in either screen 7 or screen 14.
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500. As a minimum, die shall be 100 percent probed to ensure the assembled chips will meet the
requirements of table I, group A, subgroup 2.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be
applied to achieve TJ = +135
°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.
4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 MIL-STD-750. Read and record data (ZθJX) shall be supplied to the qualifying activity on one lot
(random sample of 500 devices minimum) prior to shipment. The following conditions shall apply.
a. IH forward heating current ----------- 250 mA.
b. tH heating time -------------------------- 10 ms.
c. IM measurement current -------------- 10 mA.
d. tMD measurement delay time ------- 30 - 60 s.
e. VCE collector-emitter voltage ------- 10 V dc minimum.
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 20 °C/W.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N7225 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 34A, N-CH, MOSFET PWR TRANSISTOR, REPE - Bulk 制造商:International Rectifier 功能描述:200V SINGLE N-CH HI-REL MOSFET TOP254AA 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JANTXV2N7225U | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 27.4A 3SMD-1 - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JANTXV2N7227 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 14A 3PIN TO-254AA - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET N-CH |
| JANTXV2N7227U | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 14A 3SMD-1 - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET N-CH |
| JANTXV2N7228 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 34A, N-CH, MOSFET PWR TRANSISTOR, REPE - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
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