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參數(shù)資料
| 型號(hào)： | JANTXVH2N7261 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 8A條（丁）|至205AF |
| 文件頁數(shù)： | 12/21頁 |
| 文件大?。?/td> | 307K |
| 代理商： | JANTXVH2N7261 |
MIL-PRF-19500/350G
2
1.4 Primary electrical characteristics.
hFE
Cobo
|hfe|
VCE(sat)2
IE = 0
IC = 100 mA dc
IC = 1.5 A dc
VCE = 2 V dc
IC = 3.0 A dc
VCE = 5 V dc
VCB = 10 V dc
100 kHz
≤ f ≤ 1
MHz
VCE = 5 V dc
f = 20 MHz
IB = 150 mA dc IB = 150 mA dc
ton
toff
2N3867
2N3868
2N3867
2N3868
2N3867S 2N3868S 2N3867S 2N3968S
pF
ns max ns max
V dc
Min
Max
40
200
30
150
20
120
3
12
100
600
0.75
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from
the Document Automation and Production Services, Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
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