參數(shù)資料
型號(hào)： JANTXVH2N7262
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5.5A I(D) | TO-205AF
中文描述： 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 5.5AI（四）|至205AF
文件頁(yè)數(shù)： 19/21頁(yè)
文件大?。?/td> 307K
代理商： JANTXVH2N7262
MIL-PRF-19500/350G
7
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
* 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II, the tests specified in table II herein it shall be performed by the first inspection lot processed
to this revision to maintain qualification.
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-PRF-19500
(table IV) and as specified herein. The following measurements shall be made in accordance with table I herein.
Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
3c
Thermal impedance,
method 3131 of MIL-STD-750.
Thermal impedance,
method 3131 of MIL-STD-750.
7
Hermetic seal (optional)
(1)
9
I
CBO2
and h
FE4
Not applicable
10
24 hours minimum
11
ICEX1; h
FE2
;
I
CEX1 100 percent of
initial value or 200 nA dc, whichever
is greater;
h
FE2
=
± 15 percent of initial value.
ICEX1; h
FE2
12
See 4.3.2
240 hours minimum
See 4.3.2
80 hours minimum
13
Subgroup 2 and 3 of table I herein;
I
CEX1 100 percent of initial value or
200 nA dc, whichever is greater;
h
FE2
=
± 15 percent of initial value.
Subgroup 2 of table I herein;
I
CEX1 100 percent of initial value or
200 nA dc, whichever is greater;
h
FE2
=
± 15 percent of initial value.
(1) Hermetic seal test shall be performed in screen 7.
* 4.3.1. Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.3.2. Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc, TA = room ambient
as defined in 4.5 of MIL-STD-750. Power shall be applied to the device to achieve a junction temperature,
TJ = +135° C minimum and a minimum power dissipation = 75 percent of max PT as defined in 1.3.
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