參數(shù)資料
型號(hào): JC328
英文描述: PNP General Purpose Transistors
中文描述: PNP通用型晶體管
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 43K
代理商: JC328
1997 Mar 10
4
Philips Semiconductors
Product specification
PNP general purpose transistors
JC327; JC327A; JC328
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
V
BE
decreases by about
2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
100
5
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
20 V
I
E
= 0; V
CB
=
20 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
100 mA; V
CE
=
1 V
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
JC327; JC328
JC327A
JC327-16; JC328-16
JC327-25; JC328-25
JC327-40; JC328-40
DC current gain
collector-emitter saturation voltage I
C
=
500 mA; I
B
=
50 mA
base-emitter voltage
collector capacitance
transition frequency
100
100
100
160
250
40
80
8
600
400
250
400
600
700
1.2
h
FE
V
CEsat
V
BE
C
c
f
T
I
C
=
500 mA; V
CE
=
1 V
mV
V
pF
MHz
I
C
=
500 mA; V
CE
=
1 V; note 1
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz
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