參數(shù)資料
型號(hào)： JC501R
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： NPN general purpose transistor
中文描述： 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁(yè)數(shù)： 3/8頁(yè)
文件大小： 42K
代理商： JC501R
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN general purpose transistor
JC501
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
135
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 45 V
I
E
= 0; V
CB
= 45 V; T
j
= 125
°
C
I
C
= 0; V
EB
= 6 V
I
C
= 1 mA; V
CE
= 5 V
I
C
= 1 mA; V
CE
= 5 V
15
4
100
600
nA
μ
A
nA
I
EBO
h
FE
h
FE
emitter cut-off current
DC current gain
DC current gain
JC501P
JC501Q
JC501R
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
135
200
300
550
11.5
130
270
400
600
200
600
830
1.06
700
6
V
CEsat
mV
mV
mV
V
mV
pF
pF
MHz
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V;
R
S
= 2 k
; f = 1 kHz; B = 200 Hz
V
BEsat
base-emitter saturation voltage
V
BE
C
c
C
e
f
T
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
F
noise figure
10
dB
相關(guān)PDF資料
PDF描述
JC501O TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | TO-92
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