參數(shù)資料
型號: JC548C
英文描述: TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92
中文描述: 晶體管|晶體管|叩| 30V的五(巴西)總裁| 100mA的一(c)|至92
文件頁數(shù): 3/8頁
文件大小: 46K
代理商: JC548C
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN general purpose transistors
JC546; JC547; JC548
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
0.25
K/mW
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 10
μ
A; V
CE
= 5 V;
see Figs 2 and 3
15
5
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
JC547A
JC546B; JC547B; JC548B
DC current gain
JC547A
JC546B; JC547B; JC548B
collector-emitter saturation
voltage
90
150
I
C
= 2 mA; V
CE
= 5 V;
see Figs 2 and 3
110
200
580
100
180
290
90
200
700
900
660
2.5
11.5
2
220
450
250
600
700
770
10
V
CEsat
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA; note 1
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V; note 2
I
C
= 10 mA; V
CE
= 5 V; note 2
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
V
BE
base-emitter voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
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