參數(shù)資料
型號: JC550B
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN general purpose transistors
中文描述: 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 4/8頁
文件大?。?/td> 53K
代理商: JC550B
1997 Jul 08
4
Philips Semiconductors
Product specification
NPN general purpose transistors
JC549; JC550
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 10
μ
A; V
CE
= 5 V;
see Figs 2 and 3
15
5
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
JC549B; JC550B
JC549C; JC550C
DC current gain
JC549; JC550
JC549B; JC550B
JC549C; JC550C
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
150
270
h
FE
I
C
= 2 mA; V
CE
= 5 V;
see Figs 2 and 3
200
200
420
580
100
290
520
90
200
700
900
660
2.5
11.5
800
450
800
250
600
700
770
4
V
CEsat
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA; note 1
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V; note 2
I
C
= 10 mA; V
CE
= 5 V; note 2
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 10 Hz to 15.7 kHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
V
BEsat
base-emitter saturation voltage
V
BE
base-emitter voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
4
dB
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