參數(shù)資料
型號(hào): JTX1N6112A
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 2/2頁
文件大?。?/td> 113K
代理商: JTX1N6112A
1N6102A
Thru
1N6137A
TEL:805-498-2111 FAX:805-498-3804
1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
QPL
500 Watt Axial Leaded TVS
AMBIENT TEMPERATURE (TA) IN degC
MAX. POWER (W)
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
120
140
160
180
100
60
40
20
0
Pulse conditions as
defined by 10 X 1000us
0
40
80
120
160
200
Pp or
Ipp in %
of max
ratings
Tj (oC)
impulse waveform
A
D
B
C
NOTE
N
DIM
MAX
MIN
MAX
MIN
INCHES
MM
DIMENSIONS
A
B
C
D
2
0.140
1.300
1.00
0.026
0.033
0.66
0.84
0.085
2.1
3.6
25.4
33.0
0.245
0.140
3.5
6.3
NOTES :
1. Controlling dimension is inches.
2. Includes uncontrolled area of device leads.
PEAK PULSE POWER vs. PULSE TIME
10x1000s IMPULSE WAVEFORM
PULSE DERATING CURVE
STEADY STATE DERATING CHARACTERISTICS
FOR FREE AIR MOUNTING
MECHANICAL OUTLINE
SCHEMATIC
0.1
1
10
100
0.1
1
10
100
1000
10000
Pulse Duration (us)
Ppp
-
Peak
Pulse
Power
(kW)
相關(guān)PDF資料
PDF描述
JTX1N6119 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
JTXV1N6120 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
JTX1N6122 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
JTX1N6132 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
JTXV1N6107 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JTX1N6121 制造商: 功能描述: 制造商:undefined 功能描述:
JTX1N6121A 制造商: 功能描述:
JTX1N6149A 制造商:Microwave Semiconductor 功能描述:
JTX1N6152AUSUS 制造商:Semtech Corporation 功能描述:4PROD LEG TVS BI 1500W 24
JTX1N6156AUS 制造商:Microsemi Corporation 功能描述: