參數(shù)資料
型號： K2500GH
元件分類： 晶閘管
英文描述： 280 V, SIDAC, DO-15
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù)： 1/10頁
文件大?。?/td> 242K
代理商： K2500GH
321
Please refer to http://www.littelfuse.com for current information.
Revised: August 29, 2008
Teccor
brand Thyristors
High Energy Bidirectional SIDACs
2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Kxxx0yH Series
H
Kxxx0yH Series
Description
The new Kxxx0yH is a higher energy SIDAC switch for gas
ignition applications requiring higher current pulse current
especially at low repetition rate. It is offered in a DO-15 and
TO-92 leaded packages as well as DO-214 surface mount
package. Voltage activation of this solid state switch is
accomplished with peak voltage level of 190 to 280Volts. The
SIDAC is a silicon bilateral voltage triggered Thyristor switch
that switches on through a negative resistance region to a
low on-state voltage. Conduction will continue until current
is interrupted or lowered below minimum holding current of
the device.
Features
Electrical Specifications
(T
J
= 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Max
Unit
V
BO
Breakover/Trigger Voltage
K2000yH
K2200yH
K2400yH
K2500yH
K2000yH
K2200yH
K2400yH
K2500yH
190
205
220
240
180
180
190
200
215
230
250
280
V
V
DRM
Repetitive Peak Off-state Voltage
V
I
T(RMS)
V
TM
On-state RMS Current
Peak On-state Voltage
50/60Hz, T
J
< 125°C
I
= 1A
R
= 100Ω
50/60Hz Sine Wave
1
1.5
A
V
I
H
Dynamic Holding Current
150
mA
R
S
BO
– V
S
)
Switching Resistance, R
=(V
(I
S
– I
BO
)
50/60Hz Sine Wave
100
8
I
BO
Breakover Current
Peak Repetitive Pulse Current
(refer to figure 4)
Critical Rate of Rise of On-State Current
Critical Rate of Rise of Off-State Voltage
Storage Temperature Range
Junction Temperature Range
50/60Hz Sine Wave
50
120
280
150
μA
I
TRM
t
p
= 10μs
60Hz
5Hz
A
di/dt
dv/dt
T
S
T
J
A/μs
V/μs
°C
°C
1500
-40
-40
150
125
18
30
35
75
95
R
R
JL
Thermal Resistance, Junction to Lead
DO-15
DO-214
DO-92
DO-15
DO-92
°C/W
R
R
JC
Thermal Resistance, Junction to Case
°C/W
R
R
JA
Thermal Resistance, Junction to Ambient
°C/W
Schematic Symbol
Applications
Suitable for high voltage power supplies, natural gas
igniters, and Xenon flash ignition.
t "$$JSDVJU0SJFOUFE
t 5SJHHFSJOH7PMUBHFPG
to 280V
t "1VMTF$VSSFOU
Capability
t 3P)4$PNQMJBOU
Note: xxx - voltage, y = package
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K2500GHAP 功能描述:硅對稱二端開關(guān)元件 250V Sidac DO15 High Energy RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
K2500GHRP 功能描述:SIDAC 250V 1A DO-15 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 二端交流開關(guān)元件，硅對稱二端開關(guān)元件 系列:- 產(chǎn)品變化通告:Product Obsolescence 14/Apr/2010 標(biāo)準(zhǔn)包裝:5,000 系列:- 電流 - 峰值輸出:900mA 電壓 - 擊穿:150 ~ 170V 電流 - 維持(Ih):100mA 電流 - 擊穿:200µA 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商設(shè)備封裝:軸向 包裝:帶卷 (TR)
K2500GHU 功能描述:SIDAC 250V 1A DO-15 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 二端交流開關(guān)元件，硅對稱二端開關(guān)元件 系列:- 產(chǎn)品變化通告:Product Obsolescence 14/Apr/2010 標(biāo)準(zhǔn)包裝:5,000 系列:- 電流 - 峰值輸出:900mA 電壓 - 擊穿:150 ~ 170V 電流 - 維持(Ih):100mA 電流 - 擊穿:200µA 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商設(shè)備封裝:軸向 包裝:帶卷 (TR)
K2500GHURP 功能描述:SIDAC 250V 1A DO-15 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 二端交流開關(guān)元件，硅對稱二端開關(guān)元件 系列:- 產(chǎn)品變化通告:Product Obsolescence 14/Apr/2010 標(biāo)準(zhǔn)包裝:5,000 系列:- 電流 - 峰值輸出:900mA 電壓 - 擊穿:150 ~ 170V 電流 - 維持(Ih):100mA 電流 - 擊穿:200µA 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商設(shè)備封裝:軸向 包裝:帶卷 (TR)
K2500GRP 功能描述:硅對稱二端開關(guān)元件 250V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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