參數(shù)資料
型號: K4D263238D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 16x31.5 mm; Packaging: Bulk
中文描述: 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL
文件頁數(shù): 1/18頁
文件大?。?/td> 239K
代理商: K4D263238D
128M DDR SDRAM
K4D263238D
- 1 -
Rev. 1.3 (Jul. 2002)
128Mbit DDR SDRAM
Revision 1.3
July 2002
1M x 32Bit x 4 Banks
Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
相關(guān)PDF資料
PDF描述
K4D263238D-QC40 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238D-QC50 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 100uF; Voltage: 100V; Case Size: 12.5x25 mm; Packaging: Bulk
K4D263238E-GC25 DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
K4D263238E-GC2A DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D263238D-QC40 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238D-QC50 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC2A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL