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參數(shù)資料
| 型號： | K4D263238F-QC50 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| 中文描述： | 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL |
| 文件頁數(shù)： | 15/17頁 |
| 文件大?。?/td> | 237K |
| 代理商： | K4D263238F-QC50 |
128M DDR SDRAM
K4D263238F
- 15 -
Rev 1.1 (May 2003)
AC CHARACTERISTICS (I)
Note :
1 For normal write operation, even numbers of Din are to be written inside DRAM
Parameter
Symbol
-40
-50
Unit
Note
Min
15
17
10
5
3
5
3
3
2
1
2
Max
-
-
100K
-
Min
12
14
8
4
2
4
2
2
2
1
2
Max
-
-
100K
-
Row cycle time
tRC
tRFC
tRAS
tRCDRD
tRCDWR
tRP
tRRD
tWR
tCDLR
tCCD
tMRD
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery + Pre-
charge
Exit self refresh to read command
Power down exit time
Refresh interval time
-
-
-
-
-
-
-
-
-
-
-
-
1
1
tDAL
8
-
6
-
tCK
tXSR
tPDEX
tREF
200
-
-
-
200
-
-
-
tCK
ns
us
1tCK+tIS
7.8
1tCK+tIS
7.8
AC CHARACTERISTICS (II)
* 183/166MHz were supported in K4D263238F-QC50
K4D263238F-QC40
Frequency
250MHz ( 4.0ns )
200MHz ( 5.0ns )
Cas Latency
3
3
tRC
15
12
tRFC
17
14
tRAS
10
8
tRCDRD
5
4
tRCDWR
3
2
tRP
5
4
tRRD
3
2
tDAL
8
6
Unit
tCK
tCK
K4D623238F-QC50
Frequency
200MHz ( 5.0ns )
183MHz ( 5.5ns )
166MHz ( 6.0ns )
Cas Latency
3
3
3
tRC
12
12
10
tRFC
14
14
12
tRAS
8
8
7
tRCDRD
4
4
3
tRCDWR
2
2
2
tRP
4
4
3
tRRD
2
2
2
tDAL
6
6
5
Unit
tCK
tCK
tCK
(Unit : Number of Clock)
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