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參數(shù)資料
| 型號： | K4D28163HD-TC36 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit DDR SDRAM |
| 中文描述： | 128Mbit DDR SDRAM的 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 121K |
| 代理商： | K4D28163HD-TC36 |
128M DDR SDRAM
K4D28163HD
- 3 -
Rev. 1.4(Aug. 2002)
The K4D28163HD is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2.097,152 words
by 16 bits, fabricated with SAMSUNG
’
s high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 1.1GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety
of high performance memory system applications.
3.3V + 5% power supply for device operation
2.5V + 5% power supply for I/O interface
SSTL_2 compatible inputs/outputs
4 banks operation
MRS cycle with address key programs
-. Read latency 3 (clock)
-. Burst length (2, 4 and 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive
going edge of the system clock
Differential clock input
No Wrtie-Interrupted by Read Function
GENERAL DESCRIPTION
FEATURES
2 DQS’ s ( 1DQS / Byte )
Data I/O transactions on both edges of Data strobe
DLL aligns DQ and DQS transitions with Clock transition
Edge aligned data & data strobe output
Center aligned data & data strobe input
DM for write masking only
Auto & Self refresh
32ms refresh period (4K cycle) for -36/-40
64ms refresh period (4K cycle) for -50/-60
66pin TSOP-II
Maximum clock frequency up to 275MHz
Maximum data rate up to 550Mbps/pin
FOR 2M x 16Bit x 4 Bank DDR SDRAM
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
ORDERING INFORMATION
Part NO.
Max Freq.
Max Data Rate
Interface
Package
K4D28163HD-TC36
275MHz
550Mbps/pin
SSTL_2
66pin TSOP-II
K4D28163HD-TC40
250MHz
500Mbps/pin
K4D28163HD-TC50
200MHz
400Mbps/pin
K4D28163HD-TC60
166MHz
333Mbps/pin
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D28163HD-TC40 | 128Mbit DDR SDRAM |
| K4D28163HD-TC50 | 128Mbit DDR SDRAM |
| K4D28163HD-TC60 | 128Mbit DDR SDRAM |
| K4D28163HD | 128Mbit DDR SDRAM |
| K4D551638D | 256Mbit GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D28163HD-TC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit DDR SDRAM |
| K4D28163HD-TC40000 | 制造商:Samsung SDI 功能描述:2M X 16bit X 4 banks double data rate synchronous dram with BI-directional data strobe and dll |
| K4D28163HD-TC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit DDR SDRAM |
| K4D28163HD-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit DDR SDRAM |
| K4D310-AB20-09 | 功能描述:鼓風(fēng)機 AC CENTRIF BLOWER RoHS:否 制造商:Murata 產(chǎn)品:Blowers 電流類型:DC 電源電壓:5.3 V 氣流:1 l/min 軸承類型: 噪聲: 速度: 功率額定值: 框架尺寸 (mm):20 mm x 20 mm x 1.85 mm 外殼材料: 端接類型:SMD/SMT 系列:MZB |
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