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參數(shù)資料
| 型號(hào)： | K4D28163HD |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit DDR SDRAM |
| 中文描述： | 128Mbit DDR SDRAM的 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 121K |
| 代理商： | K4D28163HD |
128M DDR SDRAM
K4D28163HD
- 14 -
Rev. 1.4(Aug. 2002)
AC CHARACTERISTICS (II)
K4D28163HD-TC36
Frequency
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
166MHz ( 6.0ns )
Cas Latency
3
3
3
3
tRC
15
14
12
10
tRFC
17
16
14
12
tRAS
10
9
8
7
tRCD
5
5
4
3
tRP
5
5
4
3
tRRD
2
2
2
2
tDAL
8
8
7
6
Unit
tCK
tCK
tCK
tCK
(Unit : Number of Clock)
AC CHARACTERISTICS (I)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
Parameter
Symbol
-36
-40
-50
-60
Unit
Note
Min
15
Max
-
Min
14
Max
-
Min
12
Max
-
Min
10
Max
-
Row cycle time
t
RC
t
RFC
t
RAS
t
RCD
t
RP
t
RRD
tCK
tCK
tCK
tCK
tCK
tCK
Refresh row cycle time
17
-
16
-
14
-
12
-
Row active time
RAS to CAS delay
10
5
100K
-
9
5
100K
-
8
4
100K
-
7
3
100K
-
Row precharge time
Row active to Row active
Last data in to Row precharge
@Normal Precharge
Last data in to Row precharge
@Auto Precharge
Last data in to Read command
t
CDLR
Col. address to Col. address
5
2
-
-
5
2
-
-
4
2
-
-
3
2
-
-
t
WR
3
-
3
-
2
-
2
-
tCK
1
t
WR_A
3
-
3
-
3
-
3
-
tCK
1
2
-
2
-
2
-
2
-
tCK
tCK
tCK
1
t
CCD
t
MRD
t
DAL
1
-
1
-
1
-
1
-
Mode register set cycle time
Auto precharge write recovery
+ Precharge
Exit self refresh to read com-
2
-
2
-
2
-
2
-
8
-
8
-
7
-
6
-
tCK
t
XSR
t
PDEX
t
REF
200
-
200
-
200
-
200
-
tCK
Power down exit time
Refresh interval time
1tCK+tIS
7.8
-
-
1tCK+tIS
7.8
-
-
1tCK+tIS
15.6
-
-
1tCK+tIS
15.6
-
-
ns
us
K4D28163HD-TC40
Frequency
250MHz ( 4.0ns )
200MHz ( 5.0ns )
166MHz ( 6.0ns )
Cas Latency
3
3
3
tRC
14
12
10
tRFC
16
14
12
tRAS
9
8
7
tRCD
5
4
3
tRP
5
4
3
tRRD
2
2
2
tDAL
8
7
6
Unit
tCK
tCK
tCK
K4D28163HD-TC50
Frequency
200MHz ( 5.0ns )
166MHz ( 6.0ns )
Cas Latency
3
3
tRC
12
10
tRFC
14
12
tRAS
8
7
tRCD
4
3
tRP
4
3
tRRD
2
2
tDAL
7
6
Unit
tCK
tCK
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| K4D551638D-TC2A | 256Mbit GDDR SDRAM |
| K4D551638D-TC33 | 256Mbit GDDR SDRAM |
| K4D551638D-TC36 | 256Mbit GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D28163HD-TC36 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit DDR SDRAM |
| K4D28163HD-TC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit DDR SDRAM |
| K4D28163HD-TC40000 | 制造商:Samsung SDI 功能描述:2M X 16bit X 4 banks double data rate synchronous dram with BI-directional data strobe and dll |
| K4D28163HD-TC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit DDR SDRAM |
| K4D28163HD-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit DDR SDRAM |
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