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參數(shù)資料
| 型號(hào)： | K4D64163HF-TC36 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| 中文描述： | 100萬× 16 × 4，銀行雙數(shù)據(jù)速率同步DRAM |
| 文件頁數(shù)： | 11/16頁 |
| 文件大小： | 162K |
| 代理商： | K4D64163HF-TC36 |
64M DDR SDRAM
K4D64163HF
- 11 -
Rev. 1.1(Aug. 2002)
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, T
A
=0 to 65
°
C)
Note :
1. Measured with outputs open.
2. Refresh period is 64ms.
Parameter
Symbol
Test Condition
Version
Unit Note
-33
-36
-40
-50
-60
Operating Current
(One Bank Active)
I
CC1
Burst Lenth=2
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
210
200
190
170
160
mA
1
Precharge Standby Current
in Power-down mode
I
CC2
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
5
mA
Precharge Standby Current
in Non Power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
110
105
95
80
70
mA
Active Standby Current
power-down mode
I
CC3
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
110
105
95
80
70
mA
Active Standby Current in
in Non Power-down mode
I
CC3
N
CKE
≥
VIH(min), CS
≥
VIH(min),
t
CC
=
t
CC
(min)
160
150
140
120
100
mA
Operating Current
( Burst Mode)
I
CC4
t
RC
≥
t
RFC
(min)
t
RC
≥
t
RFC
(min)
Page Burst, All Banks activated.
390
370
350
320
300
mA
Refresh Current
I
CC5
t
RC
≥
t
RFC
(min)
210
200
190
180
170
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
2
mA
1. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same
Note :
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to V
SS
=0V, V
DD
=3.3V+
5%, V
DDQ
=2.5V+
5%,T
A
=0 to 65
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Input High (Logic 1) Voltage; DQ
V
IH
V
REF
+0.35
-
-
V
Input Low (Logic 0) Voltage; DQ
V
IL
-
-
V
REF
-0.35
V
Clock Input Differential Voltage; CK and CK
V
ID
0.7
-
V
DDQ
+0.6
V
1
Clock Input Crossing Point Voltage; CK and CK
V
IX
0.5*V
DDQ
-0.2
-
0.5*V
DDQ
+0.2
V
2
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