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參數(shù)資料
| 型號： | K4E640412E-TI45 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 16米x 4位的CMOS動態(tài)隨機(jī)存儲器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 5/21頁 |
| 文件大?。?/td> | 192K |
| 代理商： | K4E640412E-TI45 |
CMOS DRAM
K4E660412E,K4E640412E
CAPACITANCE
(T
A
=25
°
C, V
CC
=3.3V, f=1MHz)
Industrial Temperature
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A12]
C
IN1
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ3]
C
DQ
-
7
pF
AC CHARACTERISTICS
(-40
°
C
≤
T
A
≤
85
°
C, See note 2)
Test condition : V
CC
=3.3V
±
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
-50
-60
Units
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
74
84
104
ns
Read-modify-write cycle time
t
RWC
101
113
138
ns
Access time from RAS
t
RAC
45
50
60
ns
3,4,10,12
Access time from CAS
t
CAC
t
AA
12
13
15
ns
3,4,5,12
Access time from column address
23
25
30
ns
3,10,12
CAS to output in Low-Z
t
CLZ
3
3
3
ns
3
Output buffer turn-off delay from CAS
t
CEZ
3
13
3
13
3
13
ns
6,13
OE to output in Low-Z
t
OLZ
3
3
3
ns
3
Transition time (rise and fall)
t
T
1
50
1
50
1
50
ns
2
RAS precharge time
t
RP
t
RAS
25
30
40
ns
RAS pulse width
45
10K
50
10K
60
10K
ns
RAS hold time
t
RSH
8
8
10
ns
CAS hold time
t
CSH
35
38
40
ns
CAS pulse width
t
CAS
7
5K
8
10K
10
10K
ns
16
RAS to CAS delay time
t
RCD
11
33
11
37
14
45
ns
4
RAS to column address delay time
t
RAD
t
CRP
9
22
9
25
12
30
ns
10
CAS to RAS precharge time
5
5
5
ns
Row address set-up time
t
ASR
0
0
0
ns
Row address hold time
t
RAH
7
7
10
ns
Column address set-up time
t
ASC
0
0
0
ns
Column address hold time
t
CAH
t
RAL
7
7
10
ns
Column address to RAS lead time
23
25
30
ns
Read command set-up time
t
RCS
0
0
0
ns
Read command hold time referenced to CAS
t
RCH
0
0
0
ns
8
Read command hold time referenced to RAS
t
RRH
0
0
0
ns
8
Write command hold time
t
WCH
7
7
10
ns
Write command pulse width
t
WP
t
RWL
6
7
10
ns
Write command to RAS lead time
8
8
10
ns
Write command to CAS lead time
t
CWL
7
7
10
ns
Data set-up time
t
DS
0
0
0
ns
9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E640412E | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JI45 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JI50 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E-JI45 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E640412E-TI50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-TI60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-TP45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-TP50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-TP60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
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