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參數(shù)資料
| 型號： | K4E640412E-TI60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 16米x 4位的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 2/21頁 |
| 文件大?。?/td> | 192K |
| 代理商： | K4E640412E-TI60 |
CMOS DRAM
K4E660412E,K4E640412E
Industrial Temperature
V
CC
DQ0
DQ1
N.C
N.C
N.C
N.C
W
RAS
A0
A1
A2
A3
A4
A5
V
CC
V
SS
DQ3
DQ2
N.C
N.C
N.C
CAS
OE
A12(N.C)*
A11
A10
A9
A8
A7
A6
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
PIN CONFIGURATION
(Top Views)
* (N.C) : N.C for 4K Refresh product
Pin Name
Pin Function
A0 - A12
Address Inputs(8K Product)
A0 - A11
Address Inputs(4K Product)
DQ0 - 3
Data In/Out
V
SS
Ground
RAS
Row Address Strobe
CAS
Column Address Strobe
W
Read/Write Input
OE
Data Output Enable
V
CC
Power(+3.3V)
N.C
No Connection
V
CC
DQ0
DQ1
N.C
N.C
N.C
N.C
W
RAS
A0
A1
A2
A3
A4
A5
V
CC
V
SS
DQ3
DQ2
N.C
N.C
N.C
CAS
OE
A12(N.C)*
A11
A10
A9
A8
A7
A6
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
(T : 400mil TSOP(II))
(J : 400mil SOJ)
K4E660412E-J
K4E640412E-J
K4E660412E-T
K4E640412E-T
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4E640412E-TP45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-TP50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-TP60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640812B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E640812C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
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