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參數(shù)資料
| 型號： | K4F170412D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 4米× 4位的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 4/20頁 |
| 文件大小： | 225K |
| 代理商： | K4F170412D |
K4F170411D, K4F160411D
K4F170412D, K4F160412D
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time, t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS, Address cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, CAS, Address cycling @t
PC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ=Don
′
t care, T
RC
=31.25us(4K/L-ver), 62.5us(2K/L-ver), T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ3=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
K4F170412D
90
80
1
1
90
80
80
70
0.5
200
90
80
250
200
K4F160412D
110
100
1
1
110
100
90
80
0.5
200
110
100
250
200
K4F170411D
90
80
2
1
90
80
80
70
1
250
90
80
300
250
K4F160411D
110
100
2
1
110
100
90
80
1
250
110
100
300
250
I
CC1
Don
′
t care
-50
-60
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
uA
uA
I
CC2
Normal
L
Don
′
t care
I
CC3
Don
′
t care
-50
-60
-50
-60
I
CC4
Don
′
t care
I
CC5
Normal
L
Don
′
t care
I
CC6
Don
′
t care
-50
-60
I
CC7
I
CCS
L
L
Don
′
t care
Don
′
t care
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相關代理商/技術(shù)參數(shù) |
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|---|---|
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