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參數(shù)資料
| 型號： | K4F660412D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 16米x 4位的CMOS動態(tài)隨機(jī)存儲器的快速頁面模式 |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4F660412D |
CMOS DRAM
K4F660412D,K4F640412D
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-0.5 to +4.6
V
Voltage on V
CC
supply relative to V
SS
V
CC
-0.5 to +4.6
V
Storage Temperature
Tstg
-55 to +150
°
C
Power Dissipation
P
D
1
W
Short Circuit Output Current
I
OS
Address
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : Vcc+1.3V at pulse width
≤
15ns which is measured at V
CC
*2 : -1.3 at pulse width
≤
15ns which is measured at V
SS
Parameter
Symbol
Min
Typ
Max
Units
Supply Voltage
V
CC
3.0
3.3
3.6
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.0
-
Vcc+0.3
*1
0.8
V
Input Low Voltage
V
IL
-0.3
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.3V,
all other pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-2mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=2mA)
V
OL
-
0.4
V
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| K4F660811B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
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