參數(shù)資料
型號(hào)： K4H560838M-TLB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Mb DDR SDRAM
中文描述： 128MB DDR SDRAM的
文件頁(yè)數(shù)： 15/19頁(yè)
文件大?。?/td> 171K
代理商： K4H560838M-TLB0
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
AC Timing Parameters and Specifications
Rev. 1.1 August. 2003
Parameter
Symbol
- CC(DDR400@CL=3)
Min
55
70
40
15
15
10
15
2
5
6
0.45
0.45
-0.55
-0.65
-
0.9
0.4
0.72
0
0.25
0.4
0.2
0.2
0.35
- C4(DDR400@CL=3)
Min
60
70
40
18
18
10
15
2
5
6
0.45
0.45
-0.55
-0.65
-
0.9
0.4
0.72
0
0.25
0.4
0.2
0.2
0.35
Unit
Note
Max
Max
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay
Row precharge time
Row active to Row active delay
Write recovery time
Internal write to read command delay
tRC
tRFC
tRAS
tRCD
tRP
tRRD
tWR
tWTR
ns
ns
ns
ns
ns
ns
ns
tCK
ns
ns
tCK
tCK
ns
ns
ns
tCK
tCK
tCK
ps
tCK
tCK
tCK
tCK
70K
70K
Clock cycle time
CL=3.0
CL=2.5
tCK
10
12
0.55
0.55
+0.55
+0.65
0.4
1.1
0.6
1.28
10
12
0.55
0.55
+0.55
+0.65
0.4
1.1
0.6
1.28
16
Clock high level width
Clock low level width
DQS-out access time from CK/CK
Output data access time from CK/CK
Data strobe edge to ouput data edge
Read Preamble
Read Postamble
CK to valid DQS-in
Write preamble setup time
Write preamble
Write postamble
DQS falling edge to CK rising-setup time
DQS falling edge from CK rising-hold time
DQS-in high level width
tCH
tCL
tDQSCK
tAC
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPRE
tWPST
tDSS
tDSH
tDQSH
13
5
0.6
0.6
4
tCK
DQS-in low level width
Address and Control Input setup time
Address and Control Input hold time
tDQSL
tIS
tIH
0.35
0.6
0.35
0.6
tCK
ns
h,7~10
h,7~10
0.6
0.6
ns
Data-out high impedence time from CK/CK
Data-out low impedence time from CK/CK
Mode register set cycle time
DQ & DM setup time to DQS, slew rate 0.5V/ns
DQ & DM hold time to DQS, slew rate 0.5V/ns
DQ & DM input pulse width
Control & Address input pulse width for each input
Refresh interval time
tHZ
tLZ
tMRD
tDS
tDH
tDIPW
tIPW
tREFI
-
tAC max
tAC max
-
tAC max
tAC max
ns
ns
tCK
ns
ns
ns
ns
us
3
3
tAC min
2
0.4
0.4
1.75
2.2
tAC min
2
0.4
0.4
1.75
2.2
i, j
i, j
9
9
6
7.8
7.8
Output DQS valid window
tQH
tHP
-tQHS
min
tCH/tCL
-
tHP
-tQHS
min
tCH/tCL
-
ns
12
Clock half period
tHP
-
-
ns
11, 12
相關(guān)PDF資料
PDF描述
K4H560838E-ZLB3 Connector Kit; Contents Of Kit:C14610G0246001 24 position hood PG 21 double latch low profile top entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes
K4H560838E-ZCA2 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838A-TCA0 DIODE ZENER SINGLE 150mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-523 3K/REEL
K4H560838D-GCA2 DIODE ZENER SINGLE 500mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-123 3K/REEL
K4H560838D-GCB0 DIODE ZENER SINGLE 150mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-523 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560838N 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Consumer Memory
K4H560838N-LCB3000 制造商:Samsung Semiconductor 功能描述:
K4H560838N-LCCC000 制造商:Samsung Semiconductor 功能描述:
K4H561638A-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H561638A-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
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