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參數(shù)資料
| 型號(hào)： | K4R271669A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| 中文描述： | 256 × 16/18位× 2 * 16屬銀行直接RDRAMTM |
| 文件頁數(shù)： | 39/64頁 |
| 文件大?。?/td> | 4052K |
| 代理商： | K4R271669A |
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Page 37
Direct RDRAM
K4R271669A/K4R441869A
Rev. 1.02 Jan. 2000
Figure 42: SKIP Register
Figure 43: TEST Registers
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
AS MSE MS
Read/write register (except AS field).
Reset value is zero (SIO Reset).
AS - Autoskip. Read-only value determined by
autoskip circuit and stored when SETF serial command
is received by RDRAM during initialization. In figure
58, AS=1 corresponds to the early Q(a1) packet and
AS=0 to the Q(a1) packet one t
CYCLE
later for the four
uncertain cases.
MSE - Manual skip enable (0=auto, 1=manual).
MS - Manual skip (MS must be 1 when MSE=1).>
During initialization, the RDRAMs at the furthest point
in the fifth read domain may have selected the AS=0
value, placing them at the closest point in a sixth read
domain. Setting the MSE/MS fields to 1/1 overrides
the autoskip value and returns them to the furthest
point of the fifth read domain.
Control Register: SKIP
Address: 04b
16
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Read/write registers.
Reset value of TEST78,79 is zero ( SIO Reset).
Do not read or write TEST78,79 after SIO reset.
TEST77 must be written with zero after SIO reset.
These registers must only be used for testing purposes.
Control Register: TEST77
Address: 04d
16
Address: 04e
16
Address: 04f
16
Control Register: TEST78
Control Register: TEST79
Figure 44: TCYCLE Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
TCYCLE13..TCYCLE0
Read/write register.
Reset value is undefined
TCYCLE13..0 - Specifies the value of the t
CYCLE
datasheet parameter in 64ps units. For the t
CYCLE,MIN
of 2.5ns (2500ps), this field should be written with the
value
“
00027
16
”
(39
64ps).
Control Register: TCYCLE
Address: 04c
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4R271669A-N(M)CK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R441869A | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R441869A-N(M)CG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R441869A-N(M)CK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R441869A-N(M)CK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4R271669A-N(M)CK7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R271669A-N(M)CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R271669A-NB(M)CCG6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R271669A-NMCG6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R271669A-NMCK7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
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