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參數(shù)資料
| 型號： | K4S1G0732B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SDRAM stacked 1Gb B-die |
| 中文描述： | 1Gb的乙堆疊內(nèi)存芯片 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 126K |
| 代理商： | K4S1G0732B |
CMOS SDRAM
Rev. 1.1 February 2004
SDRAM stacked 1Gb B-die (x8)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S1G0732B-TC75
4. Unless otherwise noticed, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
).
Notes :
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
RC
(min)
I
O
= 0 mA
110
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
4
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
4
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
40
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
20
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
8
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
8
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
50
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
35
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4banks Activated
t
CCD
= 2CLKs
130
mA
1
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
220
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
12
mA
3
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|---|---|
| K4S1G0732B-TC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM stacked 1Gb B-die |
| K4S280432A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S280432A-TC/L10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S280432A-TC/L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S280432A-TC/L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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