- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373068 > K4S560832E-TL75 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Mb E-die SDRAM Specification PDF資料下載
參數(shù)資料
| 型號： | K4S560832E-TL75 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die SDRAM Specification |
| 中文描述： | 256Mb的電子芯片內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 198K |
| 代理商： | K4S560832E-TL75 |
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.3 August 2004
FUNCTIONAL BLOCK DIAGRAM
Bank Select
Data Input Register
16M x 4 / 8M x 8 / 4M x 16
16M x 4 / 8M x 8 / 4M x 16
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
16M x 4 / 8M x 8 / 4M x 16
16M x 4 / 8M x 8 / 4M x 16
Timing Register
* Samsung Electronics reserves the right to change products or specification without notice.
相關PDF資料 |
PDF描述 |
|---|---|
| K4S561632E-UC75 | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S561632E-UL60 | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S560832E-UC75 | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S561633C-P75 | 16Mx16 SDRAM 54CSP |
| K4S561633C-RBL | 16Mx16 SDRAM 54CSP |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4S560832E-UC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S560832E-UL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S560832H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Product Guide |
| K4S560832J | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Consumer Memory |
| K4S560832J-UC/L75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb J-die SDRAM Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復。