參數(shù)資料
型號： K4S561632E-UC60
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
中文描述： 256Mb的電子芯片與內(nèi)存規(guī)格鉛54 TSOP-II免費（符合RoHS）
文件頁數(shù)： 6/14頁
文件大小： 198K
代理商： K4S561632E-UC60
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.3 August 2004
PIN CONFIGURATION
(Top view)
V
DD
N.C
V
DDQ
N.C
DQ0
V
SSQ
N.C
N.C
V
DDQ
N.C
DQ1
V
SSQ
N.C
V
DD
N.C
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
N.C
V
SSQ
N.C
DQ3
V
DDQ
N.C
N.C
V
SSQ
N.C
DQ2
V
DDQ
N.C
V
SS
N.C/RFU
DQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
54Pin TSOP
(400mil x 875mil)
(0.8 mm Pin pitch)
PIN FUNCTION DESCRIPTION
Pin
Name
Input Function
CLK
System clock
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row/column addresses are multiplexed on the same pins.
Row address : RA
0
~ RA
12
,
Column address : (x4 : CA
0
~ CA
9
,CA
11
),
(x8 : CA
0
~ CA
9
),
(x16 : CA
0
~ CA
8
)
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when DQM active.
Data inputs/outputs are multiplexed on the same pins.
(x4 : DQ
0
~
3
), (x8 : DQ
0
~
7
), (x16 : DQ
0
~
15
)
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
CS
Chip select
CKE
Clock enable
A
0
~ A
12
Address
BA
0
~ BA
1
Bank select address
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
DQM
Data input/output mask
DQ
0
~
N
Data input/output
V
DD
/V
SS
Power supply/ground
V
DDQ
/V
SSQ
Data output power/ground
N.C/RFU
No connection
/reserved for future use
This pin is recommended to be left No Connection on the device.
V
DD
DQ0
V
DDQ
N.C
DQ1
V
SSQ
N.C
DQ2
V
DDQ
N.C
DQ3
V
SSQ
N.C
V
DD
N.C
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
V
SS
DQ7
V
SSQ
N.C
DQ6
V
DDQ
N.C
DQ5
V
SSQ
N.C
DQ4
V
DDQ
N.C
V
SS
N.C/RFU
DQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
N.C/RFU
UDQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
x16
x8
x4
x16
x8
x4
相關PDF資料
PDF描述
K4S560832E-NL75 256Mb E-die SDRAM Specification 54pin sTSOP-II
K4S560832E-TC75 256Mb E-die SDRAM Specification
K4S560832E-TL75 256Mb E-die SDRAM Specification
K4S561632E-UC75 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561632E-UL60 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
相關代理商/技術參數(shù)
參數(shù)描述
K4S561632E-UC75 制造商:Samsung Semiconductor 功能描述:
K4S561632E-UL60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561632E-UL75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561632H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Product Guide
K4S561632J 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb J-die SDRAM Specification
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